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MMJT350T1 Bipolar Power Transistors
PNP Silicon
. . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. * High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc * Excellent DC Current Gain - hFE = 30 -240 @ IC = 50 mAdc * Epoxy Meets UL94, V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V
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0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS
C 2,4
B1
E3
Schematic
MARKING DIAGRAM
SOT-223 CASE 318E Style 1
AYM T350
T350 A Y M
= Specific Device Code = Assembly Location = Last Digit of Year = Month Code
4 C
B 1
C 2
E 3
Top View Pinout
ORDERING INFORMATION
Device MMJT350T1 Package SOT-223 Shipping 1000 / Tape & Reel
(c) Semiconductor Components Industries, LLC, 2003
1
October, 2003 - Rev. 1
Publication Order Number: MMJT350T1/D
MMJT350T1
II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol VCEO VCB VEB IC Value 300 300 3.0 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak 0.5 0.75 Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 2.75 22 1.40 0.65 W mW/C W W C TJ, Tstg - 55 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC RqJA RqJA TL
Max 45 85 190
Unit
Thermal Resistance - Junction to Case - Junction-to-Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material - Junction-to-Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds
C/W
260
C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0 Adc) Collector-Base Current (VCB = Rated VCBO, VEB = 0) Emitter Cut-off Current ( VBE = 5.0 Vdc) ON CHARACTERISTICS (Note ) DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc)
Symbol
Min
Max
Unit
VCEO(SUS) ICBO IEBO
300 - -
- 100 100
Vdc mAdc mAdc
hFE 30 20 240 -
-
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MMJT350T1
200 TJ = 150C 25C -55 C 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
hFE , DC CURRENT GAIN
100 70 50 30 20
0.4
IC/IB = 10
VCE = 2.0 V VCC = 10 V 200 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500
0.2 VCE(sat) 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500
10 5.0 7.0 10
Figure 1. DC Current Gain
Figure 2. "On" Voltages
V, TEMPERATURE COEFFICIENTS (mV/C)
IC, COLLECTOR CURRENT (mA)
1000 700 500 300 200 100 70 50 30 20 10 20 1.0 ms dc
+1.2 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 5.0 7.0 10 qVB for VBE -55 C to +25C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 *qVC for VCE(sat) *APPLIES FOR IC/IB < hFE/4 +100 C to +150C +25 C to +100C
100 ms
-55 C to +25C +25 C to +150C
500 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 50 100 200 30 70 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active-Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
4.0 PD , POWER DISSIPATION (WATTS)
3.0 TC
2.0
1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C)
Figure 5. Power Derating
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3
MMJT350T1
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE K
A F
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3
4
S
1 2
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
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4
MMJT350T1/D

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